? semiconductor components industries, llc, 2013 june, 2013 ? rev. 7 1 publication order number: mcr12dsm/d mcr12dsm, mcr12dsn sensitive gate silicon controlled rectifiers reverse blocking thyristors designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; cdi (capacitive discharge ignition); and small engines. features ? small size ? passivated die for reliability and uniformity ? low level triggering and holding characteristics ? epoxy meets ul 94 v ? 0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v ? these are pb ? free devices maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive off ? state voltage (note 1) (t j = ? 40 to 110 c, sine wave, 50 hz to 60 hz) mcr12dsm mcr12dsn v drm, v rrm 600 800 v on ? state rms current (180 conduction angles; t c = 75 c) i t(rms) 12 a average on ? state current (180 conduction angles; t c = 75 c) i t(av) 7.6 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 110 c) i tsm 100 a circuit fusing consideration (t = 8.3 msec) i 2 t 41 a 2 sec forward peak gate power (pulse width 10 sec, t c = 75 c) p gm 5.0 w forward average gate power (t = 8.3 msec, t c = 75 c) p g(av) 0.5 w forward peak gate current (pulse width 10 sec, t c = 75 c) i gm 2.0 a operating junction temperature range t j ? 40 to 110 c storage temperature range t stg ? 40 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. scrs 12 amperes rms 600 ? 800 volts k g a pin assignment 1 2 3 anode gate cathode 4 anode see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information http://onsemi.com ipak case 369d style 4 dpak case 369c style 4 marking diagrams y = year ww = work week r12dsx = device code x= m or n g=pb ? free package 1 2 3 4 yww r1 2dsxg 1 2 3 4 yww r1 2dsxg
mcr12dsm, mcr12dsn http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, ? junction ? to ? case thermal resistance ? junction ? to ? ambient thermal resistance ? junction ? to ? ambient (note 2) r jc r ja r ja 2.2 88 80 c/w maximum lead temperature for soldering purposes (note 3) t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) characteristics symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (note 4) (v ak = rated v drm or v rrm ; r gk = 1.0 k )t j = 25 c t j = 110 c i drm , i rrm ? ? ? ? 10 500 a on characteristics peak reverse gate blocking voltage, (i gr = 10 a) v grm 10 12.5 18 v peak reverse gate blocking current, (v gr = 10 v) i grm ? ? 1.2 a peak forward on ? state voltage (note 5), (i tm = 20 a) v tm ? 1.3 1.9 v gate trigger current (continuous dc) (note 6) (v d = 12 v, r l = 100 )t j = 25 c t j = ? 40 c i gt 5.0 ? 12 ? 200 300 a gate trigger voltage (continuous dc) (note 6) (v d = 12 v, r l = 100 )t j = 25 c t j = ? 40 c t j = 110 c v gt 0.45 ? 0.2 0.65 ? ? 1.0 1.5 ? v holding current (v d = 12 v, initiating current = 200 ma, r gk = 1 k )t j = 25 c t j = ? 40 c i h 0.5 ? 1.0 ? 6.0 10 ma latching current (v d = 12 v, i g = 2.0 ma, r gk = 1 k )t j = 25 c t j = ? 40 c i l 0.5 ? 1.0 ? 6.0 10 ma turn ? on time (source voltage = 12 v, r s = 6.0 k , i t = 16 a(pk), r gk = 1.0 k ) (v d = rated v drm , rise time = 20 ns, pulse width = 10 s) tgt ? 2.0 5.0 s dynamic characteristics critical rate of rise of off ? state voltage (v d = 0.67 x rated v drm , exponential waveform, r gk = 1.0 k , t j = 110 c) dv/dt 2.0 10 ? v/ s critical rate of rise of on ? state current (i pk = 50 a, p w = 40 sec, dig/dt = 1 a/ sec, i gt = 10 ma) di/dt ? 50 100 a/ s 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. 4. ratings apply for negative gate voltage or r gk = 1.0 k . devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 5. pulse test: pulse width 2.0 msec, duty cycle 2%. 6. r gk current not included in measurement.
mcr12dsm, mcr12dsn http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) 180 90 figure 1. average current derating figure 2. on ? state power dissipation 8.0 0 i t(av) , average on-state current (amps) 110 105 100 i t(av) , average on-state current (amps) 3.0 8.0 0 8.0 4.0 2.0 0 t c , maximum allowable case temperature ( c) p 95 85 1.0 2.0 3.0 1.0 2.0 6.0 10 16 , average power dissipation (watts) (av) dc 180 120 90 60 = 30 dc 120 60 = 30 5.0 4.0 5.0 90 4.0 = conduction angle = conduction angle 80 70 75 6.0 7.0 12 14 6.0 7.0
mcr12dsm, mcr12dsn http://onsemi.com 4 figure 3. on ? state characteristics figure 4. transient thermal response figure 5. typical gate trigger current versus junction temperature figure 6. typical gate trigger voltage versus junction temperature 5.0 0 v t , instantaneous on-state voltage (volts) 100 10 1.0 0.1 t, time (ms) 1.0 0.1 1.0 0.1 0.01 4.0 -25 20 -40 t j , junction temperature ( c) 1000 10 t j , junction temperature ( c) -25 65 -40 0.1 20 5.0 i r (t) , transient thermal resistance 1.0 3.0 10 100 1000 10 k , gate trigger current ( a) i gt 50 110 65 5.0 110 35 50 v gt , gate trigger voltage (volts) , instantaneous on-state current (amps) t 80 typical @ t j = 25 c maximum @ t j = 25 c maximum @ t j = 110 c z jc(t) = r jc(t) r(t) 1.0 1.0 2.0 -10 35 95 100 -10 95 80 (normalized) gate open r gk = 1.0 k figure 7. typical holding current versus junction temperature figure 8. typical latching current versus junction temperature 65 110 -40 t j , junction temperature ( c) t j , junction temperature ( c) i h , holding current (ma) i 1.0 0.1 -25 5.0 20 50 95 , latching current (ma) l 10 -10 35 80 r gk = 1.0 k 65 110 -40 1.0 0.1 -25 5.0 20 50 95 10 -10 35 80 r gk = 1.0 k
mcr12dsm, mcr12dsn http://onsemi.com 5 figure 9. holding current versus gate ? cathode resistance 1000 10 k 100 r gk , gate-cathode resistance (ohms) 10 6.0 4.0 2.0 0 i t j = 25 c figure 10. exponential static dv/dt versus gate ? cathode resistance and junction temperature 100 r gk , gate-cathode resistance (ohms) 1000 10 1.0 static dv/dt (v/ s) t j = 110 c 1000 i gt = 10 a figure 11. exponential static dv/dt versus gate ? cathode resistance and peak voltage static dv/dt (v/ s) figure 12. exponential static dv/dt versus gate ? cathode resistance and gate trigger current sensitivity 8.0 i gt = 25 a , holding current (ma) h 100 90 c 70 c 100 r gk , gate-cathode resistance (ohms) 1000 10 1.0 t j = 110 c 1000 100 v pk = 800 v 600 v 400 v 100 r gk , gate-cathode resistance (ohms) 1000 10 1.0 v d = 800 v t j = 110 c 1000 100 i gt = 10 a static dv/dt (v/ s) i gt = 25 a ordering information device package type package shipping ? mcr12dsmt4g dpak (pb ? free) 369c 2500 / tape & reel mcr12dsn ? 1g ipak (pb ? free) 369d 75 units / rail mcr12dsnt4g dpak (pb ? free) 369c 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mcr12dsm, mcr12dsn http://onsemi.com 6 package dimensions dpak (single gauge) case 369c issue d style 4: pin 1. cathode 2. anode 3. gate 4. anode b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw
mcr12dsm, mcr12dsn http://onsemi.com 7 package dimensions ipak case 369d issue c style 4: pin 1. cathode 2. anode 3. gate 4. anode 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mcr12dsm/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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